The metal masked ROM is basically only 2 metal/contact layers. It's not a full new design and tapeout. You could roll a new set of parameters every ~2-3months. It's not an architectural change. See statements below.
https://www.eetimes.com/taalas-specializes-to-extremes-for-e...
https://www.turingpost.com/p/taalas
https://cambrian-ai.com/taalas-launches-hardcore-chip-with-i...
Part of the key is that by moving even from 6nm to 3-4nm one could embed a 20-30B model as part of a MoE (or only a subset of activated layers) on a single reticle die (note B300s are already multi-reticle), with a separate predictive/dispatch model controlling them each on a separate chip. This is without even stacking CiM ROM die. Moving the layer activations (and KV cache etc) between die requires relatively high speeds (and low latency), but distributed with multiple die in parallel might well be doable even with standard multilane PCIe. Of course KV cache prefill could also be handled by external GPUs. I'm sure AMD will make some reasonable choices.
But that means your different chips all have different sets of weights and are different generations.
If none of that is baked into the chip as now then all the chips are running the latest weights every time.
Even if you could ignore the stuff built into the chip when the time came, at that point you just wasted money on silicon that’s useless in 2-3 months.