Rowhammer is most certainly a hardware flaw. DRAM manufacturers have pushed cells too close together to meet the specifications claimed on their datasheets. Increasing cell sizes would be the correct hardware fix for the issue. Engineering is accepting the reality of physics to build things that are useful.
Unfortunately, we live in a world where the few percentage points on the production cost of DRAM needed to completely mitigate rowhammer is sufficient to ensure that defective DRAM continues to be sold well after the industry became aware of the problem. This is one of the instances where a class action lawsuit might actually do some good.
> Increasing cell sizes would be the correct hardware fix for the issue. Engineering is accepting the reality of physics to build things that are useful.
Which they're not doing, in fact they're doing the opposite since what you're suggesting is both expensive and makes things (a lot slower). Oh and while I'm complaining: thousands of people are investigating how to place DDR much closer to other logic that also emits radio waves.
Oh ... and even if you did move the capacitors apart, that would make it more difficult. But by using more cells to hammer you can still make it fail. That would even be counterbalanced because the frequency needed for triggering rowhammer would go down as well, so it'd be a more forgiving environment for exploits.